IRL3705NSTRR【PDF 1/11 页】MOSFET N-CH 55V 89A D2PAK

收藏本站

您好，
买卖IC网欢迎您。
请登录
免费注册

买卖IC网

Sheet目录448

[1页]2页 3页 4页 5页

PD - 91502C

IRL3705NS/L

Logic-Level Gate Drive

HEXFET ? Power MOSFET

Advanced Process Technology

Surface Mount (IRL3705NS)

V DSS = 55V

Low-profile through-hole (IRL3705NL)

175°C Operating Temperature

Fast Switching

R DS(on) = 0.01 ?

D P ak

l FullyAvalancheRated

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The D 2 Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D 2 Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRL3705NL) is available for low-

profile applications.

Absolute Maximum Ratings

Parameter

Max.

I D = 89A ?

T O -26 2

Units

I D @ T C = 25°C

Continuous Drain Current, V GS @ 10V ?

89 ?

I D @ T C = 100°C

I DM

P D @T A = 25°C

P D @T C = 25°C

V GS

E AS

I AR

E AR

dv/dt

Continuous Drain Current, V GS @ 10V ?

Pulsed Drain Current ??

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy ??

Avalanche Current ?

Repetitive Avalanche Energy ?

Peak Diode Recovery dv/dt ??

310

3.8

170

1.1

± 16

340

1.7

5.0

W/°C

V/ns

T J

T STG

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

-55 to + 175

300 (1.6mm from case )

°C

Thermal Resistance

Parameter

Typ.

Max.

Units

R θ JC

R θ JA

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

–––

0.90

°C/W

5/12/98

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

相关代理商/技术参数

IRL3705NSTRRHR 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 89A 3PIN D2PAK - Tape and Reel

IRL3705NSTRRPBF 功能描述:MOSFET 55V Single N-Channel HEXFET Power MOSFET RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

IRL3705Z 功能描述:MOSFET N-CH 55V 75A TO-220AB RoHS:否类别:分离式半导体产品 >> FET - 单系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔封装/外壳:TO-220-3 整包供应商设备封装:TO-220FP 包装:管件

IRL3705ZHR 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 86A 3PIN TO-220AB - Bulk

IRL3705ZL 功能描述:MOSFET N-CH 55V 75A TO-262 RoHS:否类别:分离式半导体产品 >> FET - 单系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔封装/外壳:TO-220-3 整包供应商设备封装:TO-220FP 包装:管件

IRL3705ZLPBF 功能描述:MOSFET MOSFT 55V 86A 8mOhm 40nC Log Lvl RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

IRL3705ZPBF 功能描述:MOSFET MOSFT 55V 86A 8mOhm 40nC Log LvlAB RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

采购需求

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

我的联系方式